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20120001_1814

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20120001_1814

Bâti de gravure de silicium DRIE (Deep reactive ion etching), permettant de faire de la gravure prof

Bâti de gravure de silicium DRIE (Deep reactive ion etching), permettant de faire de la gravure profonde, en salle blanche. Ici, un wafer est mis dans le sas de chargement.

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From the same photo report: The FEMTO-ST Institute Franche-Comté Electronics Mechanics Thermal Science and Optics – Sciences and Technologies

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