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Reference
19880001_0034
Transistors à effet de champ à grille isolée (MISFET) réalisés au laboratoire sur un substrat de pho
Transistors à effet de champ à grille isolée (MISFET) réalisés au laboratoire sur un substrat de phosphure d'Indium (InP). Dimension du canal : 100 µm x 20 µm. Image "normale au microscope à contraste interférentiel.
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